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PDF SI3911DV Data sheet ( Hoja de datos )
| Número de pieza | SI3911DV | |
| Descripción | Dual P-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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Si3911DV
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.145 @ VGS = –4.5 V
–20 0.200 @ VGS = –2.5 V
0.300 @ VGS = –1.8 V
G1
3 mm S2
G2
TSOP-6
Top View
16
25
34
2.85 mm
D1
S1
D2
ID (A)
–2.2
–1.8
–1.5
S1
G1
D1
P-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
–20
"8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
–2.2
–1.8
–1.8
–1.5
"8
–1.05
–0.75
1.15
0.83
0.73
0.53
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71380
S-20275—Rev. B, 18-Mar-02
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
93
130
90
Maximum
110
150
90
Unit
_C/W
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SI3911DV.PDF ] | |
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