(PDF) SI3900DV Datasheet - Dual N-Channel 20-V (D-S) MOSFET

Número de pieza	SI3900DV
Descripción	Dual N-Channel 20-V (D-S) MOSFET
Fabricantes	Vishay Siliconix
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No Preview Available ! Si3900DV Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.125 @ VGS = 4.5 V 0.200 @ VGS = 2.5 V ID (A) 2.4 1.8 G1 3 mm S2 G2 TSOP-6 Top View 16 25 34 2.85 mm D1 S1 D2 D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C VDS VGS ID IDM IS PD TJ, Tstg 20 "12 2.4 2.0 1.7 1.4 8 1.05 0.75 1.15 0.83 0.59 0.53 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71178 S-03511—Rev. B, 16-Apr-01 t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 93 130 75 Maximum 110 150 90 Unit _C/W www.vishay.com 1 1 page

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PDF SI3900DV Data sheet ( Hoja de datos )