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PDF SI3850DV Data sheet ( Hoja de datos )
| Número de pieza | SI3850DV | |
| Descripción | Complementary MOSFET Half-Bridge (N- and P-Channel) | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SI3850DV (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Si3850DV
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
VDS (V)
N-Channel
20
P-Channel
–20
rDS(on) (W)
0.500 @ VGS = 4.5 V
0.750 @ VGS = 3.0 V
1.00 @ VGS = –4.5 V
1.30 @ VGS = –3.0 V
TSOP-6
Top View
G1 1 6
D 25
G2 3 4
S1
D
S2
ID (A)
"1.2
"1.0
"0.85
"0.75
S2
G2
D
G1
S1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
(Surface Mounted on FR4 Board)
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20 –20
"12
"12
"1.2
"0.85
"0.95
"0.65
"3.5
"2.5
1 –1
1.25
0.8
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (Surface Mounted on FR4 Board, " v 10 sec)
Symbol
RthJA
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70778
S-55457—Rev. B, 09-Mar-98
N- or P- Channel
100
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1
1 page  
Si3850DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
PĆCHANNEL
Output Characteristics
2.5
VGS = 5.0 thru 4.0 V
2.0
3.5 V
Transfer Characteristics
2.5
TC = –55_C
2.0
25_C
1.5 1.5
3.0 V
125_C
1.0 1.0
0.5
0
0
2.0
1.6
2.5 V
2.0 V
0.5 1.0 1.5 2.0 2.5
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 3.0 V
3.0
1.2
VGS = 4.5 V
0.8
0.4
0.5
0
0
120
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS – Gate-to-Source Voltage (V)
Capacitance
100
Ciss
80
60 Coss
40
Crss
20
0
0 0.5 1.0 1.5 2.0
ID – Drain Current (A)
8
VGS = 10 V
ID = 0.85 A
6
Gate Charge
2.5
4
2
0
0 4 8 12 16 20
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
VGS = 4.5 V
ID = 0.85 A
1.6
1.2
0.8
0.4
0
0 0.3 0.6 0.9 1.2 1.5 1.8
Qg – Total Gate Charge (nC)
0
–50 –25
0
25 50 75 100 125 150
TJ – Junction Temperature (_C)
Document Number: 70778
S-55457—Rev. B, 09-Mar-98
www.vishay.com S FaxBack 408-970-5600
2-5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SI3850DV.PDF ] | |
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