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PDF SI3590DV Data sheet ( Hoja de datos )
| Número de pieza | SI3590DV | |
| Descripción | N- and P-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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Si3590DV
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
N-Channel
30
0.077 at VGS = 4.5 V
0.120 at VGS = 2.5 V
P-Channel - 30
0.170 at VGS = - 4.5 V
0.300 at VGS = - 2.5 V
ID (A)
3
2
-2
- 1.2
G1
3 mm S2
G2
TSOP-6
Top View
16
25
34
D1
S1
D2
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Ultra Low RDS(on) N- and P-Channel for High
Efficiency
• Optimized for High-Side/Low-Side
• Minimized Conduction Losses
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Portable Devices Including PDAs, Cellular Phones and
Pagers
D1 S2
G2
G1
2.85 mm
Ordering Information: Si3590DV-T1-E3 (Lead (Pb)-free)
Si3590DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
10 s Steady State
P-Channel
10 s Steady State
Drain-Source Voltage
VDS 30
- 30
Gate-Source Voltage
VGS
± 12
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
3 2.5 - 2 - 1.7
2.3
2.0
- 1.6
- 1.3
Pulsed Drain Current
IDM 8
-8
Continuous Source Current (Diode Conduction)a
IS
1.05
0.75
- 1.05
- 0.75
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
1.15
0.70
0.83
0.53
1.15
0.70
0.83
0.53
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
N-Channel
Typ.
Max.
93 110
130 150
75 90
P-Channel
Typ.
Max.
93 110
130 150
75 90
Unit
°C/W
Document Number: 72032
S09-1927-Rev. C, 28-Sep-09
www.vishay.com
1
1 page  
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted
2
1
Duty Cycle = 0.5
Si3590DV
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 87 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
10
Document Number: 72032
S09-1927-Rev. C, 28-Sep-09
www.vishay.com
5
5 Page 
AN823
Vishay Siliconix
255 − 260_C
1X4_C/s (max)
10 s (max)
140 − 170_C
3_C/s (max)
60-120 s (min)
Pre-Heating Zone
217_C
60 s (max)
Reflow Zone
Maximum peak temperature at 240_C is allowed.
FIGURE 3. Solder Reflow Temperature and Time Durations
3-6_C/s (max)
THERMAL PERFORMANCE
A basic measure of a device’s thermal performance is the
junction-to-case thermal resistance, Rqjc, or the
junction-to-foot thermal resistance, Rqjf. This parameter is
measured for the device mounted to an infinite heat sink and
is therefore a characterization of the device only, in other
words, independent of the properties of the object to which the
device is mounted. Table 1 shows the thermal performance
of the TSOP-6.
TABLE 1.
Equivalent Steady State Performance—TSOP-6
Thermal Resistance Rqjf
30_C/W
SYSTEM AND ELECTRICAL IMPACT OF
TSOP-6
In any design, one must take into account the change in
MOSFET rDS(on) with temperature (Figure 4).
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
ID = 6.1 A
1.4
1.2
1.0
0.8
0.6
−50 −25
0
25 50 75 100 125 150
TJ − Junction Temperature (_C)
FIGURE 4. Si3434DV
www.vishay.com
2
Document Number: 71743
27-Feb-04
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet SI3590DV.PDF ] | |
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