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PDF SI3588DV Data sheet ( Hoja de datos )
| Número de pieza | SI3588DV | |
| Descripción | N- and P-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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New Product
Si3588DV
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel
20
P-Channel
–20
G1
3 mm S2
G2
TSOP-6
Top View
16
25
34
2.85 mm
rDS(on) (W)
0.080 @ VGS = 4.5 V
0.100 @ VGS = 2.5 V
0.128 @ VGS = 1.8 V
0.145 @ VGS = –4.5 V
0.200 @ VGS = –2.5 V
0.300 @ VGS = –1.8 V
ID (A)
3.0
2.6
2.3
–2.2
–1.8
–1.5
D1
D1
S1 G1
D2
S1
N-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol 5 secs Steady State 5 secs Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
TA = 25_C
TA = 70_C
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
3.0
2.3
1.05
1.15
0.73
20
"8
2.5 –2.2
2.0 –1.8
"8
0.75
–1.05
0.83
1.15
0.53
0.73
–55 to 150
–20
–0.57
–1.5
–0.75
0.083
0.53
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71332
S-02383—Rev. A, 23-Oct-00
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
93
130
90
Maximum
110
150
90
Unit
_C/W
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New Product
Si3588DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
N-CHANNEL
0.01
10–4
Single Pulse
10–3
10–2
10–1
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
8
10
VGS = 4.5 thru 2.5 V
6
4 2V
2
1.5 V
8
6
4
2
1 10
P-CHANNEL
Transfer Characteristics
TC = –55_C
25_C
125_C
0
0
0.75
1234
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
5
0.60
0.45
VGS = 1.8 V
0.30
0.15
VGS = 2.5 V
VGS = 4.5 V
0.00
0
246
ID – Drain Current (A)
Document Number: 71332
S-02383—Rev. A, 23-Oct-00
8
0
0.0
600
0.5 1.0 1.5 2.0 2.5 3.0
VGS – Gate-to-Source Voltage (V)
Capacitance
3.5
500
Ciss
400
300
200
Coss
100 Crss
0
0 4 8 12 16 20
VDS – Drain-to-Source Voltage (V)
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5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SI3588DV.PDF ] | |
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