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PDF SI3552DV Data sheet ( Hoja de datos )
| Número de pieza | SI3552DV | |
| Descripción | N- and P-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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Si3552DV
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
N-Channel 30 0.105 at VGS = 10 V
0.175 at VGS = 4.5 V
P-Channel
- 30 0.200 at VGS = - 10 V
0.360 at VGS = - 4.5 V
ID (A)
2.5
2.0
- 1.8
- 1.2
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
G1
3 mm S2
G2
TSOP-6
Top View
16
25
34
D1
S1
D2
D1 S2
G2
G1
2.85 mm
Ordering Information: Si3552DV -T1-E3 (Lead (Pb)-free)
Si3552DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS 30 - 30
Gate-Source Voltage
VGS ± 20 ± 20
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C
TA = 70 °C
ID
2.5 - 1.8
2.0 - 1.2
Pulsed Drain Current
IDM 8
-7
Continuous Source Current (Diode Conduction)a, b
IS 1.05 - 1.05
Maximum Power Dissipationa, b
TA = 25 °C
TA = 70 °C
PD
1.15
0.73
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t≤5s
Steady State
Maximum Junction-to-Lead
Steady State
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 5 s.
Symbol
RthJA
RthJL
Typical
93
130
75
Maximum
110
150
90
Unit
V
A
W
°C
Unit
°C/W
Document Number: 70971
S09-2110-Rev. C, 12-Oct-09
www.vishay.com
1
1 page  
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
Si3552DV
Vishay Siliconix
0.01
10 - 4
Single Pulse
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
1
10
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
VGS = 10 V thru 7 V
8
6
6V
5V
4
4V
2
2V 3V
8
TC = - 55 °C
6
25 °C
125 °C
4
2
0
012345
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0
0123456
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.6 300
0.5
0.4
VGS = 4.5 V
0.3
0.2
VGS = 10 V
0.1
0.0
0
123456
ID - Drain Current (A)
On-Resistance vs. Drain Current
7
240 Ciss
180
120
Coss
60
Crss
0
0
6
12 18 24
VDS - Drain-to-Source Voltage (V)
Capacitance
30
Document Number: 70971
S09-2110-Rev. C, 12-Oct-09
www.vishay.com
5
5 Page 
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR TSOP-6
0.099
(2.510)
Return to Index
Return to Index
0.039
(1.001)
0.020
(0.508)
0.019
(0.493)
Recommended Minimum Pads
Dimensions in Inches/(mm)
www.vishay.com
26
Document Number: 72610
Revision: 21-Jan-08
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SI3552DV.PDF ] | |
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