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Número de pieza | SI1039X | |
Descripción | P-Channel 2.5-V (G-S) MOSFET | |
Fabricantes | Vishay Siliconix | |
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No Preview Available ! P-Channel 1.8 V (G-S) MOSFET
Si1039X
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
- 12
RDS(on) ()
0.165 at VGS = - 4.5 V
0.220 at VGS = - 2.5 V
0.280 at VGS = - 1.8 V
ID (A)
- 0.95
- 0.82
- 0.67
SC-89 (6-LEADS)
D1
D2
G3
6D
5D
4S
Top View
Marking Code
O WL
Lot Traceability
and Date Code
Part Number Code
Ordering Information: Si1039X-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Low Threshold
• Smallest LITTLE FOOT® Package:
1.6 mm x 1.6 mm
• Low 0.6 mm Profile
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Cell Phones and Pagers
- Load Switch
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
5 s Steady State
Drain-Source Voltage
VDS - 12
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
- 0.95
- 0.76
- 0.87
- 0.69
Pulsed Drain Current
IDM - 4
Continuous Diode Current (Diode Conduction)a
IS
- 0.18
- 0.14
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
0.21 0.17
0.13 0.10
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t5s
Steady State
Notes:
a. Surface mounted on 1" x 1" FR4 board with minimum copper.
Symbol
RthJA
Typical
500
600
Maximum
600
720
Unit
°C/W
Document Number: 70682
S10-2544-Rev. D, 08-Nov-10
www.vishay.com
1
1 page www.vishay.com
Package Information
Vishay Siliconix
SC-89 6-Leads (SOT-563F)
23
4D
aaa C
e1 2x
A4
D
654
2 3 E1
2x
aaa C
51
e
B
4
E/2
E
23
2x
bbb C
6x b
ddd M C A–B D
B
SECTION B-B
C
6
DETAIL “A”
L1
A1
L
A
A1 SEE DETAIL “A”
Notes
1. Dimensions in millimeters.
2. Dimension D does not include mold flash, protrusions or gate
burrs. Mold flush, protrusions or gate burrs shall not exceed
0.15 mm per dimension E1 does not include interlead flash
or protrusion, interlead flash or protrusion shall not exceed
0.15 mm per side.
3. Dimensions D and E1 are determined at the outmost extremes
of the plastic body exclusive of mold flash, the bar burrs, gate
burrs and interlead flash, but including any mismatch between
the top and the bottom of the plastic body.
4. Datums A, B and D to be determined 0.10 mm from the lead tip.
5. Terminal numbers are shown for reference only.
6. These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
DIM.
MIN.
A 0.56
A1 0
b 0.15
c 0.10
D 1.50
E 1.50
E1 1.15
e 0.45
e1 0.95
L 0.25
L1 0.10
C14-0439-Rev. C, 11-Aug-14
DWG: 5880
MILLIMETERS
NOM.
0.58
0.02
0.22
0.14
1.60
1.60
1.20
0.50
1.00
0.35
0.20
MAX.
0.60
0.10
0.30
0.18
1.70
1.70
1.25
0.55
1.05
0.50
0.30
Revision: 11-Aug-14
1 Document Number: 71612
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet SI1039X.PDF ] |
Número de pieza | Descripción | Fabricantes |
SI1039X | P-Channel 1.8-V (G-S) MOSFET | Vishay Siliconix |
SI1039X | P-Channel 2.5-V (G-S) MOSFET | Vishay Siliconix |
Si1039X-T1 | P-Channel 1.8-V (G-S) MOSFET | Vishay Siliconix |
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