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PDF SI1032R Data sheet ( Hoja de datos )
| Número de pieza | SI1032R | |
| Descripción | N-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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N-Channel 1.5 V (G-S) MOSFET
Si1032R/X
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
5 at VGS = 4.5 V
7 at VGS = 2.5 V
20
9 at VGS = 1.8 V
10 at VGS = 1.5 V
ID (mA)
200
175
150
50
SC-75A or SC-89
G1
3D
S2
Top View
Marking Code: G
Ordering Information:
Si1032R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free)
Si1032X-T1-GE3 (SC-89, Lead (Pb)-free -free Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Low-Side Switching
• Low On-Resistance: 5
• Low Threshold: 0.9 V (typ.)
• Fast Switching Speed: 35 ns
• TrenchFET® Power MOSFETs: 1.5 V Rated
• 2000 V ESD Protection
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Si1032R
Si1032X
Parameter
Symbol
5 s Steady State 5 s Steady State
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ± 6
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Currenta
TA = 25 °C
TA = 85 °C
ID
IDM
200 140
110 100
500
210 200
150 140
600
Continuous Source Current (Diode Conduction)a
IS 250 200 300 240
Maximum Power Dissipationa for SC-75
TA = 25 °C
TA = 85 °C
PD
280
145
250
130
340
170
300
150
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
Notes:
a. Surface mounted on FR4 board.
Unit
V
mA
mW
°C
V
Document Number: 71172
S10-2544-Rev. F, 08-Nov-10
www.vishay.com
1
1 page  
www.vishay.com
SC-75A: 3 Leads
Package Information
Vishay Siliconix
12
D
e2
3 B1(b1)
e1
3
2X
D3
E/2
L2
1
2 E1
C
2X
1
34
2XB1
ddd M C A – B D
C
4X
Seating Plane
D
2
e3
E
1
1
bbb C
2X
With Tin Planting
Base Metal
B1
b1
c1
Section B-B 5
DWG: 5868
Notes
Dimensions in millimeters will govern.
1.Dimension D does not include mold flash, protrusions or gate
burrs. Mold flash protrusions or gate burrs shall not exceed
0.10 mm per end. Dimension E1 does not include Interlead flash
or protrusion. Interlead flash or protrusion shall not exceed
0.10 mm per side.
2.Dimensions D and E1 are determined at the outmost extremes of
the plastic body exclusive of mold flash, tie bar burrs, gate burrs
and interlead flash, but including any mismatch between the top
and bottom of the plastic body.
3.Datums A, B and D to be determined 0.10 mm from the lead tip.
4.Terminal positions are shown for reference only.
5.These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
DIMENSIONS
aaa
bbb
ccc
ddd
TOLERANCES
0.10
0.10
0.10
0.10
DIM.
A
A1
A2
B1
b1
c
c1
D
E
E1
e1
e2
e3
L
L1
L2
q
q1
MIN.
-
0.00
0.65
0.19
0.17
0.13
0.10
1.48
1.50
0.66
0.15
0°
4°
MILLIMETERS
NOM.
-
-
0.70
-
-
-
-
1.575
1.60
0.76
0.50 BSC
1.00 BSC
0.50 BSC
0.205
0.40 ref.
0.15 BSC
-
-
MAX.
0.80
0.10
0.80
0.24
0.21
0.15
0.12
1.68
1.70
0.86
0.30
8°
10°
NOTE
5
5
5
1, 2
1, 2
C15-1445-Rev. F, 23-Nov-15
1
Document Number: 71348
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SI1032R.PDF ] | |
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