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PDF SI1026X Data sheet ( Hoja de datos )
| Número de pieza | SI1026X | |
| Descripción | N-Channel 60-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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N-Channel 60-V (D-S) MOSFET
Si1026X
Vishay Siliconix
PRODUCT SUMMARY
V(BR)DSS(min) (V) rDS(on) (W)
60 1.40 @ VGS = 10 V
VGS(th) (V)
1 to 2.5
ID (mA)
500
FEATURES
BENEFITS
D Low On-Resistance: 1.40 W
D Low Threshold: 2 V (typ)
D Low Input Capacitance: 30 pF
D Fast Switching Speed: 15 ns (typ)
D Low Input and Output Leakage
D Miniature Package
D Low Offset Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Error Voltage
D Small Board Area
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
S1 1
SC-89
6 D1
G1 2
D2 3
5 G2
4 S2
Top View
Marking Code: E
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Currentb
Continuous Source Current (diode conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
ESD
60
"20
320 305
230 220
–650
450 380
280 250
145 130
–55 to 150
2000
Notes
a. Surface Mounted on FR4 Board.
b. Pulse width limited by maximum junction temperature.
Unit
V
mA
mW
_C
V
Document Number: 71434
S-03518—Rev. A, 23-Apr-01
www.vishay.com
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1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SI1026X.PDF ] | |
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