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PDF SGW5N60RUFD Data sheet ( Hoja de datos )
| Número de pieza | SGW5N60RUFD | |
| Descripción | Short Circuit Rated IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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SGW5N60RUFD
Short Circuit Rated IGBT
IGBT
General Description
Fairchild's RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
• Short circuit rated 10us @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : VCE(sat) = 2.2 V @ IC = 5A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 37ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
CC
G
G E D2-PAK
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 100°C
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
E
SGW5N60RUFD
600
± 20
8
5
15
8
56
10
60
25
-55 to +150
-55 to +150
300
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount) (2)
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
Typ.
--
--
--
Max.
2.0
3.5
40
Units
V
V
A
A
A
A
A
us
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGW5N60RUFD Rev. A1
1 page  
1000
Common Emitter
V =±
GE
15V,
R
G
=
40Ω
T = 25℃ ━━
C
T = 125℃ ------
C
Eoff
100
Eon
3 4 5 6 7 8 9 10
Collector Current, I [A]
C
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
RL = 60Ω
12
T = 25℃
C
V = 100V
9 CC
300V
200V
6
3
0
0 3 6 9 12 15
Gate Charge, Qg [nC]
Fig 14. Gate Charge Characteristics
18
50
Ic MAX. (Pulsed)
10
Ic MAX. (Continuous)
50us
100us
1㎳
1 DC Operation
0.1 Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
100
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristic
1000
40
10
1
1
Safe Operating Area
VGE = 20V, TC = 100℃
10 100
Collector-Emitter Voltage, VCE [V]
1000
Fig 16. Turn-Off SOA Characteristics
10
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
0.01
10-5
single pulse
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
100 101
©2002 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGW5N60RUFD Rev. A1
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SGW5N60RUFD.PDF ] | |
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