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Número de pieza | SGL50N60 | |
Descripción | Short Circuit Rated IGBT | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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No Preview Available ! SGL50N60RUF
Short Circuit Rated IGBT
IGBT
General Description
Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provide low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
• Short circuit rated 10us @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : VCE(sat) = 2.2 V @ IC = 50A
• High input impedance
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
GC E
TO-264
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
TSC
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes,1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
E
SGL50N60RUF
600
± 20
80
50
150
10
250
100
-55 to +150
-55 to +150
300
Typ.
--
--
Max.
0.5
25
Units
V
V
A
A
A
us
W
W
°C
°C
°C
Units
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGL50N60RUF Rev. A1
1 page 10000
Common Emitter
V =±
GE
15V,
R
G
=
5.9Ω
TC = 25℃ ━━
TC = 125℃ ------
1000
Eon
Eoff
Eoff
100
10
20
40 60
Collector Current, IC [A]
80
100
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R
L
=
6Ω
T = 25℃
12 C
9
V = 100 V
CC
300 V
200 V
6
3
0
0 30 60 90 120 150
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
180
500
IC MAX. (Pulsed)
100
IC MAX. (Continuous)
10 DC Operation
50us
100us
1㎳
Single Nonrepetitive
1 Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
0.1
0.3
1
10
100
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
1000
100
10
Safe Operating Area
VGE = 20V, TC = 100℃
1
1 10 100 1000
Collector-Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA Characteristics
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01 0.01
single pulse
1E-3
10-5
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
100 101
©2002 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGL50N60RUF Rev. A1
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet SGL50N60.PDF ] |
Número de pieza | Descripción | Fabricantes |
SGL50N60 | Short Circuit Rated IGBT | Fairchild Semiconductor |
SGL50N60RUF | Short Circuit Rated IGBT | Fairchild Semiconductor |
SGL50N60RUFD | Short Circuit Rated IGBT | Fairchild Semiconductor |
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