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PDF SGL40N150 Data sheet ( Hoja de datos )
| Número de pieza | SGL40N150 | |
| Descripción | General Description | |
| Fabricantes | Fairchild Semiconductor | |
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SGL40N150
IGBT
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT)
provides low conduction and switching losses.
The SGL40N150 is designed for induction heating
applications.
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A
• High input impedance
Applications
Home appliances, induction heaters, IH JAR, and microwave ovens.
C
G
GC E
TO-264
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
E
SGL40N150
1500
± 25
40
20
120
200
80
-55 to +150
-55 to +150
300
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
Max.
0.625
25
Units
V
V
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGL40N150 Rev. A1
1 page  
14 Common Emitter
R
L
=
15Ω,
V
CC
=
600V
12
T = 25oC
C
10
8
6
4
2
0
0 25 50 75 100 125
Gate Charge, Qg [nC]
150
Fig 13. Gate Charge Characteristics
100
I MAX (Pulsed)
C
I MAX (Continuous)
C
50µs
100µs
10
1ms
DC Operation
1
Single Nonrepetitive
0.1
Pulse T = 25oC
C
Curves must be derated
linearly with increase
in temperature
0.01
0.1 1 10 100 1000
Collector - Emitter Voltage, VCE [V]
Fig 14. SOA Characteristics
©2002 Fairchild Semiconductor Corporation
SGL40N150 Rev. A1
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SGL40N150.PDF ] | |
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