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PDF SGH30N60RUFD Data sheet ( Hoja de datos )
| Número de pieza | SGH30N60RUFD | |
| Descripción | Short Circuit Rated IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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SGH30N60RUFD
Short Circuit Rated IGBT
IGBT
General Description
Fairchild's RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
• Short circuit rated 10us @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : VCE(sat) = 2.2 V @ IC = 30A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 50ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
GC E
TO-3P
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 100°C
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC =100°C
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
E
SGH30N60RUFD
600
± 20
48
30
90
25
220
10
235
90
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.53
0.83
40
Units
V
V
A
A
A
A
A
us
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGH30N60RUFD Rev. B1
1 page  
10000
Common Emitter
VGE = ± 15V, RG = 7Ω
TC = 25℃ ━━
TC = 125℃ ------
1000
Eoff
Eon
Eoff
100
15
30 45
Collector Current, IC [A]
60
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R
L
=
10Ω
12 TC = 25℃
V = 100 V
CC
9
300 V
200 V
6
3
0
0 20 40 60 80
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
100
200
100 IC MAX. (Pulsed)
IC MAX. (Continuous)
10
DC Operation
50us
100us
1㎳
1 Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
0.1
0.3
1
10
100
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
1000
100
10
Safe Operating Area
V = 20V, T = 100℃
GE C
1
1 10 100 1000
Collector-Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA Characteristics
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01 0.01
single pulse
1E-3
10-5
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
100 101
©2002 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGH30N60RUFD Rev. B1
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SGH30N60RUFD.PDF ] | |
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