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Número de pieza | SGH25N120RUF | |
Descripción | Short Circuit Rated IGBT | |
Fabricantes | Fairchild Semiconductor | |
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Short Circuit Rated IGBT
IGBT
General Description
Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
• Short circuit rated 10µs @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : VCE(sat) = 2.3 V @ IC = 25A
• High input impedance
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
GC E
TO-3P
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
TSC
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
E
SGH25N120RUF
1200
± 25
40
25
75
10
270
108
-55 to +150
-55 to +150
300
Typ.
--
--
Max.
0.46
40
Units
V
V
A
A
A
µs
W
W
°C
°C
°C
Units
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
SGH25N120RUF Rev. A1
1 page Common Emitter
V = ± 15V, R = 10Ω
GE G
T = 25℃
C
T = 125℃
C
Eoff
Eon
Eoff
Eon
1000
15 25 35 45 55
Collector Current, IC [A]
Fig 13. Switching Loss vs. Collector Current
100
I MAX. (Pulsed)
C
I MAX. (Continuous)
C
10
100µs
1ms
50µs
DC Operation
1
Single Nonrepetitive
0.1 Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
0.01
0.1 1 10 100
Collector - Emitter Voltage, VCE [V]
1000
Fig 15. SOA Characteristics
16
Common Emitter
14
R = 24Ω
L
T = 25℃
C
12
10
8
600V
400V
6
V = 200V
CC
4
2
0
0 20 40 60 80 100
Gate Charge, Qg [nC]
120
Fig 14. Gate Charge Characteristics
100
10
Safe Operating Area
V = 20V, T = 100℃
GE C
1
1 10 100 1000
Collector - Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA
10
1
0.5
0.1 0.2
0.1
0.05
0.02
0.01
0.01
1E-3
10-5
single pulse
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
100 101
©2001 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGH25N120RUF Rev. A1
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet SGH25N120RUF.PDF ] |
Número de pieza | Descripción | Fabricantes |
SGH25N120RUF | Short Circuit Rated IGBT | Fairchild Semiconductor |
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