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PDF SGH23N60UF Data sheet ( Hoja de datos )
| Número de pieza | SGH23N60UF | |
| Descripción | N-CHANNEL IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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SGH23N60UF
FEATURES
* High Speed Switching
* Low Saturation Voltage
: VCE(sat) = 1.95 V (@ Ic=12A)
* High Input Impedance
APPLICATIONS
* AC & DC Motor controls
* General Purpose Inverters
* Robotics , Servo Controls
* Power Supply
* Lamp Ballast
N-CHANNEL IGBT
TO-3P
C
G
E
ABSOLUTE MAXIMUM RATINGS
Symbol Characteristics
Rating Units
VCES
VGES
IC
ICM (1)
PC
Tj
Tstg
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current @ Tc = 25°C
Collector Current @ Tc = 100°C
Pulsed Collector Current
Maximum Power Dissipation @Tc = 25°C
Maximum Power Dissipation @Tc = 100°C
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. For Soldering
Purposes, 1/8” from case for 5 seconds
600
±20
23
12
92
100
40
-55 ~ 150
-55 ~ 150
300
V
V
A
A
A
W
W
°C
°C
°C
Notes:(1) Repetitive rating : Pulse width limited by max. junction temperature
Rev.B
©1999 Fairchild Semiconductor Corporation
1 page  
SGH23N60UF
10
N-CHANNEL IGBT
1
0.5
0.2
0.1
0.1
0.05
Pdm
t1
0.02
t2
0.01
single pulse
0.01
0.00001
0.0001
Duty factor D = t1 / t2
Peak Tj = Pdm x Zthjc + Tc
0.001
0.01
0.1
Rectangular Pulse Duration [sec]
1
Fig.5 Maximum Effective Transient Thermal Impedance, Junction to Case
10
1200
1000
800
Cies
600
400
200
0
1
Coes
Cres
10
Vce [V]
Fig.6 Typical Capacitance vs.
Collector to Emitter Voltage
18
Vcc = 300V
Ic = 12A
16
14
12
10
8
6
4
2
0
0 10 20 30
Qg [nC]
Fig.7 Typical Gate Charge vs.
Gate to Emitter Voltage
40
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SGH23N60UF.PDF ] | |
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