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PDF SGH13N60UFD Data sheet ( Hoja de datos )
| Número de pieza | SGH13N60UFD | |
| Descripción | FEATURES | |
| Fabricantes | Fairchild Semiconductor | |
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SGH13N60UFD
N-CHANNEL IGBT
FEATURES
TO-3P
* High Speed Switching
* Low Saturation Voltage
: VCE(sat) = 1.95 V (@ Ic=6.5A)
* High Input Impedance
*CO-PAK, IGBT with FRD
: Trr = 37nS (typ.)
APPLICATIONS
* AC & DC Motor controls
* General Purpose Inverters
* Robotics , Servo Controls
* Power Supply
* Lamp Ballast
ABSOLUTE MAXIMUM RATINGS
C
G
E
Symbol Characteristics
Rating Units
VCES
Collector-Emitter Voltage
600
VGES
Gate-Emitter Voltage
±20
IC Collector Current @ Tc = 25°C
13
Collector Current @ Tc = 100°C
6.5
ICM (1)
Pulsed Collector Current
52
IF
Diode Continuous Forward Current @ Tc = 100°C
8
IFM Diode Maximum Forward Current
56
PD Maximum Power Dissipation @Tc = 25°C
60
Maximum Power Dissipation @Tc = 100°C
25
Tj Operating Junction Temperature
-55 ~ 150
Tstg
Storage Temperature Range
-55 ~ 150
TL Maximum Lead Temp. For Soldering
300
Purposes, 1/8” from case for 5 seconds
Notes:(1) Repetitive rating : Pulse width limited by max. junction temperature
V
V
A
A
A
A
A
W
W
°C
°C
°C
Rev.B
©1999 Fairchild Semiconductor Corporation
1 page  
SGH13N60UFD
10
N-CHANNEL IGBT
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
Pdm
t1
t2
single pulse
0.01
0.00001
0.0001
Duty factor D = t1 / t2
Peak Tj = Pdm x Zthjc + Tc
0.001
0.01
0.1
Rectangular Pulse Duration [sec]
1
Fig.5 Maximum Effective Transient Thermal Impedance, Junction to Case
10
600
500
400 Cies
300
200
100
0
1
Coes
Cres
10
Vce [V]
Fig.6 Typical Capacitance vs.
Collector to Emitter Voltage
18
Vcc = 300V
Ic = 6.5A
16
14
12
10
8
6
4
2
0
0 5 10 15 20
Qg [nC]
Fig.7 Typical Gate Charge vs.
Gate to Emitter Voltage
25
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SGH13N60UFD.PDF ] | |
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