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PDF SGH10N60RUF Data sheet ( Hoja de datos )
| Número de pieza | SGH10N60RUF | |
| Descripción | Short Circuit Rated IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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SGH10N60RUF
Short Circuit Rated IGBT
IGBT
General Description
Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provide low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
• Short circuit rated 10us @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : VCE(sat) = 2.2 V @ IC = 10A
• High input impedance
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
GC E
TO-3P
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
TSC
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
E
SGH10N60RUF
600
± 20
16
10
30
10
75
30
-55 to +150
-55 to +150
300
Typ.
--
--
Max.
1.6
40
Units
V
V
A
A
A
us
W
W
°C
°C
°C
Units
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGH10N60RUF Rev. A1
1 page  
1000
Common Emitter
V =±
GE
15V,
R
G
=
20Ω
TC = 25℃ ━━
TC = 125℃ ------
Eoff
100
Eon
5 10 15 20
Collector Current, I [A]
C
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
RL = 30 Ω
TC = 25℃
12
V = 100 V
CC
9
300 V
200 V
6
3
0
0 10 20 30
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
100
I MAX. (Pulsed)
C
IC MAX. (Continuous)
10
DC Operation
50us
100us
1㎳
1
Single Nonrepetitive
Pulse T = 25℃
C
Curves must be derated
linearly with increase
in temperature
0.1
0.1 1
10
100
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
1000
50
10
1
1
Safe Operating Area
V = 20V, T = 100℃
GE C
10 100
Collector-Emitter Voltage, VCE [V]
1000
Fig 16. Turn-Off SOA Characteristics
10
1 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
single pulse
10-5
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
100 101
©2002 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGH10N60RUF Rev. A1
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SGH10N60RUF.PDF ] | |
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