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PDF SGH10N120RUFD Data sheet ( Hoja de datos )
| Número de pieza | SGH10N120RUFD | |
| Descripción | Short Circuit Rated IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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SGH10N120RUFD
Short Circuit Rated IGBT
IGBT
General Description
Fairchild's RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provides low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
• Short circuit rated 10µs @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : VCE(sat) = 2.3 V @ IC = 10A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 65ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
GC E
TO-3P
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
SGH10N120RUFD
1200
± 25
16
10
30
10
60
10
125
50
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
1.0
1.5
40
Units
V
V
A
A
A
A
A
µs
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGH10N120RUFD Rev. B2
1 page  
Common Emitter
V = ± 15V, R = 25Ω
GE G
T = 25℃
C
T = 125℃
C
1000
Eoff
Eon
Eoff
Eon
100
5
10 15
Collector Current, IC [A]
20
Fig 13. Switching Loss vs. Collector Current
16
Common Emitter
14
R = 60Ω
L
T = 25℃
C
12
10
600V
400V
8
Vcc=200V
6
4
2
0
0 10 20 30 40 50
Gate Charge, Qg [nC]
Fig 14. Gate Charge Characteristics
60
100
I MAX. (Pulsed)
C
I MAX. (Continuous)
10 C
50µs
100µs
1ms
DC Operation
1
0.1 Single Nonrepetitive
Pulse T = 25℃
C
Curves must be derated
linearly with increase
in temperature
0.01
0.1 1 10
100
Collector - Emitter Voltage, VCE [V]
1000
Fig 15. SOA Characteristics
10
Safe Operating Area
VGE = 20V, TC = 100℃
1
1 10 100 1000
Collector - Emitter Current, VCE [V]
Fig 16. Turn-Off SOA
10
1
0.5
0.2
0.1
0.1
0.05
0.01
0.02
0.01
1E-3
10-5
single pulse
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
100 101
©2002 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGH10N120RUFD Rev. B2
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SGH10N120RUFD.PDF ] | |
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