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PDF SGA-4186 Data sheet ( Hoja de datos )
| Número de pieza | SGA-4186 | |
| Descripción | DC-5000 MHZ CASCADABLE SIGE HBT MMIC AMPLIFIER | |
| Fabricantes | ETC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SGA-4186 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Product Description
Stanford Microdevices SGA-4186 is a high performance
SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration featuring 1 micron emitters provides
high FT and excellent thermal perfomance. The heterojunction
increases breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction non-
linearities results in higher suppression of intermodulation
products. At 850 Mhz and 45mA , the SGA-4186 typically
provides +28.3 dBm output IP3, 10 dB of gain, and +14.6
dBm of 1dB compressed power using a single positive
voltage supply. Only 2 DC-blocking capacitors, a bias
resistor and an optional RF choke are required for operation.
Gain & Return Loss vs. Frequency
VD= 3.2 V, ID= 45 mA (Typ.)
16
0
12
GAIN
8
IRL
4
ORL
-10
-20
-30
0 -40
012345
Frequency (GHz)
SGA-4186
DC-5000 MHz, Cascadable
SiGe HBT MMIC Amplifier
Product Features
High Gain : 9.2 dB at 1950 MHz
Cascadable 50 Ohm
Patented SiGe Technology
Operates From Single Supply
Low Thermal Resistance Package
Applications
Cellular, PCS, CDPD
Wireless Data, SONET
Satellite
Symbol
Parameter
G Small Signal Gain
P1dB Output Power at 1dB Compression
OIP3
Output Third Order Intercept Point
(Power out per tone = -5dBm)
Bandwidth Determined by Return Loss (<-10dB)
IRL Input Return Loss
ORL Output Return Loss
NF Noise Figure
VD Device Voltage
RTh Thermal Resistance
Test Conditions:
VS = 8 V
RBIAS = 110 Ohms
ID = 45 mA Typ.
TL = 25ºC
Units Frequency Min. Typ. Max.
dB
dBm
dBm
MHz
dB
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
850 MHz
1950 MHz
1950 MHz
9.0 10.0 11.0
9.2
8.9
14.6
12.4
28.3
25.5
5000
20.3
dB 1950 MHz
24.4
dB 1950 MHz
5.2
V
2.8 3.2
3.6
°C/W
97
OIP3 Tone Spacing = 1 MHz, Pout per tone = -5 dBm
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.stanfordmicro.com
EDS-100637 Rev. B
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SGA-4186.PDF ] | |
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