(PDF) SIDC24D30SIC3 Datasheet - Silicon Carbide Schottky Diode

Número de pieza	SIDC24D30SIC3
Descripción	Silicon Carbide Schottky Diode
Fabricantes	Infineon Technologies AG
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No Preview Available ! SIDC24D30SIC3 Silicon Carbide Schottky Diode FEATURES: Applications: • Revolutionary semiconductor material - Silicon Carbide • SMPS, snubber, secondary side rectification • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • No forward recovery A C Chip Type SIDC24D30SIC3 VBR IF Die Size Package Ordering Code 300V 10A 1.706 x 1.38 mm2 sawn on foil Q67050-A4163- A103 MECHANICAL PARAMETER: Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization Cathode metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 1.706x 1.38 1.405 x 1.08 2.354 / 1.548 mm mm2 355 µm 75 mm 0 deg 1649 pcs Photoimide 3200 nm Al 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, ≤ 350µm ∅ ≥ 0.3 mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004 1 page

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