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PDF SI9958DY Data sheet ( Hoja de datos )
| Número de pieza | SI9958DY | |
| Descripción | Complementary 20-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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Si9958DY
Vishay Siliconix
Complementary 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel
20
P-Channel
–20
rDS(on) (W)
0.10 @ VGS = 10 V
0.12 @ VGS = 6 V
0.15 @ VGS = 4.5 V
0.10 @ VGS = –10 V
0.12 @ VGS = –6V
0.19 @ VGS = –4.5 V
ID (A)
"3.5
"3
"2.5
"3.5
"3
"2.5
SO-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
D1 D1
S2
G2
G1
S1
N-Channel MOSFET
D2 D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol N-Channel P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20 –20
"20
"20
"3.5
"3.5
"2.8
"2.8
"14
"14
1.7 –1.7
2.0
1.3
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RthJA
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70141
S-01025—Rev. J, 22-May-00
N- or P-Channel
62.5
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
1
1 page  
Si9958DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
VGS = 10, 9, 8, 7, 6, 5 V
8 4V
10
8
66
4
2
0
0
0.32
3V
2V
2468
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
4
2
0
0
2000
PĆCHANNEL
Transfer Characteristics
TC = 125_C
25_C
–55_C
1234
VGS – Gate-to-Source Voltage (V)
Capacitance
5
0.24
1500
0.16
0.08
VGS = 4.5 V
VGS = 6 V
VGS = 10 V
0
02468
ID – Drain Current (A)
10
VDS = 10 V
ID = 3.5 A
8
Gate Charge
10
6
4
2
0
0 2 4 6 8 10 12 14
Qg – Total Gate Charge (nC)
Document Number: 70141
S-01025—Rev. J, 22-May-00
1000
Ciss
500
Coss
0 Crss
04
8 12 16
VDS – Drain-to-Source Voltage (V)
20
On-Resistance vs. Junction Temperature
1.4
VGS = 10 V
ID = 3.5 A
1.2
1.0
0.8
0.6
–50
0 50 100
TJ – Junction Temperature (_C)
150
www.vishay.com S FaxBack 408-970-5600
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SI9958DY.PDF ] | |
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