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PDF SI7946DP-T1 Data sheet ( Hoja de datos )
| Número de pieza | SI7946DP-T1 | |
| Descripción | Dual N-Channel 150-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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Si7946DP
Vishay Siliconix
Dual N-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
150 0.150 @ VGS = 10 V
0.168 @ VGS = 6 V
PowerPAK SO-8
6.15 mm
D1
8 D1
7
D2
6 D2
5
S1
1
G1
2
5.15 mm
S2
3 G2
4
Bottom View
Ordering Information: Si7946DP-T1
ID (A)
3.3
3.1
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
D Dual MOSFET for Space Savings
D PWM Optimized for Fast Switching
D Avalanche Rated
Package
APPLICATIONS
D Primary Side Switch
D1 D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
L = 0.1 mH
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
150
"20
3.3 2.1
2.6 1.7
10
2.9 1.2
9
4
3.5 1.4
2.2 0.9
-55 to 150
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72282
S-31361—Rev. A, 30-Jun-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
26
60
3.2
Maximum
35
85
4.2
Unit
_C/W
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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
Square Wave Pulse Duration (sec)
10 - 1
Si7946DP
Vishay Siliconix
1
Document Number: 72282
S-31361—Rev. A, 30-Jun-03
www.vishay.com
5
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