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Número de pieza | K4S560432A | |
Descripción | 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL | |
Fabricantes | Samsung semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de K4S560432A (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! K4S560432A
CMOS SDRAM
256Mbit SDRAM
16M x 4bit x 4 Banks
Synchronous DRAM
LVTTL
Revision 0.0
Sep. 1999
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.0 Sep. 1999
1 page K4S560432A
CMOS SDRAM
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Operating current
(One bank active)
Symbol
Test Condition
ICC1
Burst length = 1
tRC ≥ tRC(min)
IO = 0 mA
Version
Unit Note
-75 -80 -1H -1L
120 120 110 110 mA
1
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
ICC2P
ICC2PS
ICC2N
ICC2NS
CKE ≤ VIL(max), tCC = 10ns
CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
2
2
16
14
mA
mA
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
ICC3P
ICC3PS
ICC3N
CKE ≤ VIL(max), tCC = 10ns
CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
6
6
30
25
mA
mA
mA
Operating current
(Burst mode)
Refresh current
Self refresh current
ICC4
ICC5
ICC6
IO = 0 mA
Page burst
4banks Activated
tCCD = 2CLKs
tRC ≥ tRC(min)
CKE ≤ 0.2V
140 140 115 115 mA
1
210 210 200 200 mA
2
C 5 mA 3
L 2 mA 4
Notes : 1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S560432A-TC**
4. K4S560432A-TL**
5. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ).
Rev. 0.0 Sep. 1999
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet K4S560432A.PDF ] |
Número de pieza | Descripción | Fabricantes |
K4S560432A | 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor |
K4S560432B | 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor |
K4S560432E-NC | SDRAM 256Mb E-die | Samsung semiconductor |
K4S560432E-NC75 | SDRAM 256Mb E-die | Samsung semiconductor |
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