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PDF JANSR2N7403 Data sheet ( Hoja de datos )
| Número de pieza | JANSR2N7403 | |
| Descripción | 22A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
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JANSR2N7403
Formerly FSF9150R4
June 1998
22A, -100V, 0.140 Ohm, Rad Hard,
P-Channel Power MOSFET
Features
• 22A, -100V, rDS(ON) = 0.140Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 7.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
Ordering Information
PART NUMBER
JANSR2N7403
PACKAGE
TO-254AA
Die Family TA17756.
MIL-PRF-19500/633.
BRAND
JANSR2N7403
Description
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs specif-
ically designed for commercial and military space applica-
tions. Enhanced Power MOSFET immunity to Single Event
Effects (SEE), Single Event Gate Rupture (SEGR) in particu-
lar, is combined with 100K RADS of total dose hardness to
provide devices which are ideally suited to harsh space envi-
ronments. The dose rate and neutron tolerance necessary
for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Also available at other radiation and screening levels. See us on
the web, Intersil’s home page: http://www.intersil.com. Contact
your local Intersil Sales Office for additional information.
Symbol
D
Package
G
TO-254AA
G
S
D
S
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
2-70
File Number 4486.1
1 page  
JANSR2N7403
Typical Performance Curves Unless Otherwise Specified (Continued)
100
STARTING TJ = 25oC
STARTING TJ = 150oC
10
IF R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
IF R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
1
0.1 1
tAV , TIME IN AVALANCHE (ms)
10
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
VDS
L
CURRENT
TRANSFORMER
+
IAS
-
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
tP
50Ω
VGS ≤ 20V
50Ω
DUT
+
VDD
-
50V -150V
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
0V
VGS = -12V
VDD
RGS
RL
VDS
DUT
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
10%
VGS
10%
50%
PULSE WIDTH
90%
50%
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
2-74
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet JANSR2N7403.PDF ] | |
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