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Número de pieza | IXTK21N100 | |
Descripción | High Voltage MegaMOSTMFETs | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IXTK21N100 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! High Voltage
MegaMOSTMFETs
IXTK 21N100
IXTN 21N100
VDSS = 1000 V
ID25 = 21 A
RDS(on) = 0.55 Ω
N-Channel, Enhancement Mode
TO-264 AA (IXTK)
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
P
D
TJ
TJM
Tstg
TL
V
ISOL
M
d
Weight
Symbol
VDSS
VGH(th)
I
GSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C, Chip capability
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS t = 1 min
IISOL ≤ 1 mA
t=1s
Mounting torque
Terminal connection torque
Maximum Ratings
IXTK
IXTN
1000
1000
1000
1000
V
V
±20 ±20 V
±30 ±30 V
21 21 A
84 84 A
500 520 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 - °C
- 2500
- 3000
V~
V~
0.9/6
-
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
10 30 g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 6 mA
VDS = VGS, ID = 500 µA
V
GS
=
±20
V,
DC
V
DS
=
0
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1000
2
V
4.5 V
±200 nA
500 µA
2 mA
0.55 Ω
G
D
S
D (TAB)
miniBLOC, SOT-227 B
E153432
DG
S
G
S
S
S
D
G = Gate
D = Drain
S = Source
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
l International standard packages
l JEDECTO-264,epoxymeetUL94V-0
flammability classification
l miniBLOC,(ISOTOP-compatible) with
Aluminium nitride isolation
l Low RDS (on) HDMOSTM process
l Rugged polysilicon gate cell structure
l Low package inductance
Applications
l DC-DC converters
l Synchronous rectification
l Battery chargers
l Switched-mode and resonant-mode
power supplies
l DC choppers
l Temperature and lighting controls
Advantages
l Easy to mount
l Space savings
l High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92808I(5/97)
1-4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet IXTK21N100.PDF ] |
Número de pieza | Descripción | Fabricantes |
IXTK21N100 | High Voltage MegaMOSTMFETs | IXYS Corporation |
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