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PDF IXFT60N25Q Data sheet ( Hoja de datos )
| Número de pieza | IXFT60N25Q | |
| Descripción | HiPerFET Power MOSFETs Q-Class | |
| Fabricantes | IXYS Corporation | |
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Advanced Technical Information
HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Low Gate Charge and Capacitances
IXFH 60N25Q
IXFK 60N25Q
IXFT 60N25Q
VDSS = 250 V
ID25 = 60 A
=RDS(on) 47 mW
trr £ 250 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
I
DM
IAR
E
AR
EAS
dv/dt
PD
T
J
TJM
T
stg
TL
Md
Weight
Symbol
V
DSS
V
GS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
TC = 25°C
T
C
= 25°C
TC = 25°C
I
S
£
I,
DM
di/dt
£
100
A/ms,
V
DD
£
V,
DSS
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-264
TO-247
TO-264
TO-268
Maximum Ratings
250 V
250 V
±20 V
±30 V
60 A
240 A
60 A
45 mJ
1.5 J
5 V/ns
360
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
6g
10 g
4g
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V = 0 V, I = 1 mA
GS D
V = V , I = 4 mA
DS GS D
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
250
2
V
4V
±200 nA
50 mA
1 mA
47 mW
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
G
S
(TAB)
(TAB)
TO-264 AA (IXFK)
G
D
S
D (TAB)
G = Gate
S = Source
TAB = Drain
Features
• Low gate charge
• International standard packages
• EpoxymeetUL94V-0, flammability
classification
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Avalanche energy and current rated
• Fast intrinsic Rectifier
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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