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PDF IXFN48N50Q Data sheet ( Hoja de datos )
| Número de pieza | IXFN48N50Q | |
| Descripción | HiPerFET Power MOSFETs Q-Class | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM
Power MOSFETs
Q-Class
IXFN 44N50Q
IXFN 48N50Q
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
VDSS ID25
RDS(on)
500 V 44 A 120 mW
500 V 48 A 100 mW
trr £ 250 ns
Symbol
VDSS
V
DGR
V
GS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
T
JM
T
stg
VISOL
M
d
Weight
Test Conditions
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
50/60 Hz, RMS t = 1 min
IISOL£ 1 mA
t=1s
Mounting torque
Terminal connection torque
44N50
48N50
44N50
48N50
Maximum Ratings
500 V
500 V
±20 V
±30 V
44 A
48 A
176 A
192 A
48 A
60 mJ
2.5 mJ
5 V/ns
500
-55 to +150
150
-55 to +150
2500
3000
1.5/13
1.5/13
30
W
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
G = Gate
S = Source
S
D
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
- faster switching
• Unclamped Inductive Switching (UIS)
rated
• Low RDS (on)
• Fast intrinsic diode
• International standard package
• miniBLOC with Aluminium nitride
isolation for low thermal resistance
• Low terminal inductance (<10 nH) and
stray capacitance to heatsink (<35pf)
• Molding epoxies meet UL 94 V-0
flammability classification
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 4 mA
500
2.0
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
44N50
48N50
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V
4.0 V
±100 nA
100 mA
2 mA
120 mW
100 mW
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98715 (03/30/00)
1-2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFN48N50Q.PDF ] | |
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