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Número de pieza | IXFN44N60 | |
Descripción | HiPerFET Power MOSFETs Single Die MOSFET | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IXFN44N60 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! HiPerFETTM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Symbol
VDSS
VDGR
V
GS
VGSM
ID25
I
DM
I
AR
EAR
EAS
dv/dt
P
D
TJ
TJM
Tstg
TJ
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
T
C
= 25°C
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
T
C
= 25°C
1.6 mm (0.63 in) from case for 10 s
50/60 Hz, RMS t = 1 min
I
ISOL
£
1
mA
t=1s
Mounting torque
Terminal connection torque
IXFN 44N60
D
G
S
S
Maximum Ratings
600 V
600 V
±20 V
±30 V
44 A
176 A
44 A
60 mJ
3J
5 V/ns
600
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
- °C
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Symbol
VDSS
VGH(th)
I
GSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 8 mA
V
GS
=
±20
V,
DC
V
DS
=
0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
600
2.5
V
4.5 V
±100 nA
100 mA
2 mA
130 mW
VDSS =
ID25 =
=RDS(on)
600 V
44 A
130 mW
trr £ 250 ns
miniBLOC, SOT-227 B
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• International standard package
• miniBLOC, with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98610B (7/00)
1-4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet IXFN44N60.PDF ] |
Número de pieza | Descripción | Fabricantes |
IXFN44N60 | HiPerFET Power MOSFETs Single Die MOSFET | IXYS Corporation |
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