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Número de pieza | ITF86182SK8T | |
Descripción | 11A/ 30V/ 0.0115 Ohm/ P-Channel/ Logic Level/ Power MOSFET | |
Fabricantes | Intersil Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ITF86182SK8T (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! Data Sheet
ITF86182SK8T
January 2000 File Number 4797.2
[ /Title
(ITF86
182SK
8T)
/Sub-
ject
(11A,
30V,
0.0115
Ohm,
P-
Chan-
nel,
Logic
Level,
Power
MOS-
FET)
/Author
()
/Key-
words
(Inter-
sil,
Semi-
conduc-
tor, P-
Chan-
nel,
Logic
Level
Power
MOS-
FET,
SO8)
11A, 30V, 0.0115 Ohm, P-Channel, Logic
Level, Power MOSFET
Packaging
SO8 (JEDEC MS-012AA)
BRANDING DASH
1
2
3
4
5
Symbol
SOURCE(1)
SOURCE(2)
SOURCE(3)
GATE(4)
DRAIN(8)
DRAIN(7)
DRAIN(6)
DRAIN(5)
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.0115Ω, VGS = −10V
- rDS(ON) = 0.016Ω, VGS = −4.5V
- rDS(ON) = 0.0175Ω, VGS = −4V
• Gate to Source Protection Diode
• Simulation Models
- Temperature Compensated PSPICE™ and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
• Peak Current vs Pulse Width Curve
• Transient Thermal Impedance Curve vs Board Mounting
Area
• Switching Time vs RGS Curves
Ordering Information
PART NUMBER
PACKAGE
BRAND
ITF86182SK8T
SO8
86182
NOTE: When ordering, use the entire part number. ITF86182SK8T
is available only in tape and reel.
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
Continuous
Continuous
(TA=
(TA=
(TA=
(TA=
22115500oo00CCooCC,, VV,, VVGGGGSSSS====140.445V..V50)VV)())(NN((oNNotetooett2ee2))22.))..
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ID
ID
ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Power Dissipation (Note 2)
Derate Above 25oC . . . .
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Tech brief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
ITF86182SK8T
-30
-30
±20
-11.0
-9.0
-6.0
-6.0
Figure 4
2.5
20
-55 to 150
300
260
UNITS
V
V
V
A
A
A
A
W
mW/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. TJ = 25oC to 125oC.
2. 50oC/W measured using FR-4 board with 0.76 in2 (490.3 mm2) copper pad at 10 second.
1 CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
SABER© is a Copyright of Analogy Inc.http://www.intersil.com or 321-727-9207 | Copyright © Intersil Corporation 2000
1 page ITF86182SK8T
Typical Performance Curves (Continued)
1.10
ID = -250µA
1.05
1.0
0.95
0.90
-80
-40 0
40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
-10
VDD = -15V
-8
-6
-4
WAVEFORMS IN
-2 DESCENDING ORDER:
ID = -11A
ID = -2A
0
0 15 30 45 60 75
Qg, GATE CHARGE (nC)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
5000
1000
COSS ≅ CDS + CGD
CISS = CGS + CGD
VGS = 0V, f = 1MHz
300
CRSS = CGD
-0.1 -1 -10
VDS, DRAIN TO SOURCE VOLTAGE (V)
-30
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
400
VGS = -4.5V, VDD = -15V, ID = -6A
300
tr
tf
200
td(OFF)
100
td(ON)
0
0 10 20 30 40 50
RGS, GATE TO SOURCE RESISTANCE (Ω)
FIGURE 14. SWITCHING TIME vs GATE RESISTANCE
500
VGS = -10V, VDD = -15V, ID = -11A
400
300
td(OFF)
tf
200
100
0
0
tr
td(ON)
10 20 30 40
RGS, GATE TO SOURCE RESISTANCE (W)
50
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
5
5 Page MS-012AA
ITF86182SK8T
8 LEAD JEDEC MS-012AA SMALL OUTLINE PLASTIC PACKAGE
E
E1
D
h x 45o
L
0.060
1.52
A
A1
e
b
c
0o- 8o
0.004 IN
0.10 mm
0.050
1.27
0.155
4.0
0.275
7.0
0.024
0.6
MINIMUM RECOMMENDED FOOTPRINT FOR
SURFACE-MOUNTED APPLICATIONS
1.5mm
DIA. HOLE
INCHES
MILLIMETERS
SYMBOL MIN MAX MIN MAX NOTES
A
0.0532 0.0688 1.35
1.75
-
A1
0.004
0.0098 0.10
0.25
b
0.013
0.020
0.33
0.51
-
-
c
0.0075 0.0098 0.19
0.25
-
D
0.189
0.1968 4.80
5.00
2
E
0.2284 0.244
5.80
6.20
-
E1
0.1497 0.1574 3.80
4.00
e 0.050 BSC
1.27 BSC
3
-
H
0.0099 0.0196 0.25
0.50
-
L
0.016
0.050
0.40
1.27
4
NOTES:
1. All dimensions are within allowable dimensions of Rev. C of
JEDEC MS-012AA outline dated 5-90.
2. Dimension “D” does not include mold flash, protrusions or gate
burrs. Mold flash, protrusions or gate burrs shall not exceed
0.006 inches (0.15mm) per side.
3. Dimension “E1” does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 0.010 inches
(0.25mm) per side.
4. “L” is the length of terminal for soldering.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. Controlling dimension: Millimeter.
7. Revision 8 dated 5-99.
4.0mm
USER DIRECTION OF FEED
2.0mm
1.75mm
MS-012AA
12mm TAPE AND REEL
12mm
CL
COVER TAPE
8.0mm
40mm MIN.
ACCESS HOLE
18.4mm
330mm
13mm
50mm
GENERAL INFORMATION
1. 2500 PIECES PER REEL.
2. ORDER IN MULTIPLES OF FULL REELS ONLY.
3. MEETS EIA-481 REVISION “A” SPECIFICATIONS.
12.4mm
11
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet ITF86182SK8T.PDF ] |
Número de pieza | Descripción | Fabricantes |
ITF86182SK8T | 11A/ 30V/ 0.0115 Ohm/ P-Channel/ Logic Level/ Power MOSFET | Intersil Corporation |
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