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PDF DSEP30-12CR Data sheet ( Hoja de datos )
| Número de pieza | DSEP30-12CR | |
| Descripción | HiPerDynFRED with soft recovery (Electrically Isolated Back Surface) | |
| Fabricantes | ETC | |
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Advanced Technical Information
DSEP 30-12CR
HiPerDynFREDTM
with soft recovery
(Electrically Isolated Back Surface)
IFAV = 30 A
VRRM = 1200 V
trr = 20 ns
VRSM
V
1200
VRRM
V
1200
Type
DSEP 30-12CR
ISOPLUS 247TM
AC
C
A
Isolated back surface *
A = Anode, C = Cathode
* Patent pending
Symbol
Conditions
Maximum Ratings
IFRMS
IFAVM
IFRM
TC = 85°C; rectangular, d = 0.5
tP < 10 µs; rep. rating, pulse width limited by TVJM
70
30
tbd
IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine
250
EAS TVJ = 25°C; non-repetitive
IAS = 1.3 A; L = 180 µH
0.2
IAR VA = 1.25·VR typ.; f = 10 kHz; repetitive
0.1
TVJ
TVJM
Tstg
-55...+175
175
-55...+150
Ptot TC = 25°C
165
VISOL
50/60 Hz RMS; IISOL ≤ 1 mA
2.5
Mounting force with clip
10...50/2...10
A
A
A
A
mJ
A
°C
°C
°C
W
kV
N/lb.
Weight
typical
6g
Symbol
IR x
VF y
RthJC
RthCH
trr
IRM
Conditions
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRM
IF = 30 A;
TVJ = 150°C
TVJ = 25°C
with heatsink compound
IF = 1 A; -di/dt = 200 A/µs;
VR = 30 V; TVJ = 25°C
VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs
TVJ = 100°C
Characteristic Values
typ. max.
250 µA
2 mA
3.1 V
5.0 V
0.25
0.9
K/W
K/W
20 ns
4.0 A
Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 %
y Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
Features
q Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
q Low cathode to tab capacitance (<25pF)
q International standard package
q Planar passivated chips
q Very short recovery time
q Extremely low switching losses
q Low IRM-values
q Soft recovery behaviour
q Epoxy meets UL 94V-0
q Isolated and UL registered E153432
Applications
q Antiparallel diode for high frequency
switching devices
q Antisaturation diode
q Snubber diode
q Free wheeling diode in converters
and motor control circuits
q Rectifiers in switch mode power
supplies (SMPS)
q Inductive heating
q Uninterruptible power supplies (UPS)
q Ultrasonic cleaners and welders
Advantages
q Avalanche voltage rated for reliable
operation
q Soft reverse recovery for low EMI/RFI
q Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
q ISOPLUS 247TM package for clip or
spring mounting
Dimensions see IXYS CD 2000
1-1
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Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| DSEP30-12CR | HiPerDynFRED with soft recovery (Electrically Isolated Back Surface) | ETC |
| DSEP30-12CR | HiPerDynFRED with soft recovery (Electrically Isolated Back Surface) |  IXYS Corporation |
| DSEP30-12CR | HiPerDynFRED with soft recovery (Electrically Isolated Back Surface) | ETC |
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