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PDF DSEP30-06CR Data sheet ( Hoja de datos )

Número de pieza DSEP30-06CR
Descripción HiPerDynFREDTM Epitaxial Diode with soft recovery (Electrically Isolated Back Surface)
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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DSEP 30-06CR
HiPerDynFREDTM Epitaxial Diode
with soft recovery
(Electrically Isolated Back Surface)
IFAV = 30 A
VRRM = 600 V
trr = 20 ns
Preliminary Data
VRSM
V
VRRM
V
Type
600 600 DSEP 30-06CR
AC
Symbol
IFRMS
IFAVM
IFRM
IFSM
EAS
IAR
TVJ
TVJM
Tstg
Ptot
VISOL
FC
Weight
Conditions
Maximum Ratings
TC = 135°C; rectangular, d = 0.5
tP < 10 µs; rep. rating, pulse width limited by TVJM
70
30
tbd
TVJ = 45°C; tp = 10 ms (50 Hz), sine
300
TVJ = 25°C; non-repetitive
IAS = 3 A; L = 180 µH
1.2
VA = 1.5·VR typ.; f = 10 kHz; repetitive
0.3
-55...+175
175
-55...+150
A
A
A
A
mJ
A
°C
°C
°C
TC = 25°C
50/60 Hz RMS; IISOL £ 1 mA
mounting force with clip
250
2500
20...120
W
V~
N
typical
6g
Symbol
IR x
VF y
RthJC
RthCH
trr
IRM
Conditions
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRM
IF = 30 A; TVJ = 150°C
TVJ = 25°C
with heatsink compound
IF = 1 A; -di/dt = 200 A/µs;
VR = 30 V; TVJ = 25°C
VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs
TVJ = 100°C
Characteristic Values
typ. max.
250 µA
1 mA
1.79 V
2.46 V
0.6
0.25
K/W
K/W
20 ns
4.5 7.0
A
Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 %
y Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
ISOPLUS 247TM
C
A
Isolated back surface *
A = Anode, C = Cathode
* Patent pending
Features
q Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
q Low cathode to tab capacitance (<25pF)
q International standard package
q Planar passivated chips
q Very short recovery time
q Extremely low switching losses
q Low IRM-values
q Soft recovery behaviour
q Epoxy meets UL 94V-0
q Isolated and UL registered E153432
Applications
q Antiparallel diode for high frequency
switching devices
q Antisaturation diode
q Snubber diode
q Free wheeling diode in converters
and motor control circuits
q Rectifiers in switch mode power
supplies (SMPS)
q Inductive heating
q Uninterruptible power supplies (UPS)
q Ultrasonic cleaners and welders
Advantages
q Avalanche voltage rated for reliable
operation
q Soft reverse recovery for low EMI/RFI
q Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
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