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PDF 2SD2266 Data sheet ( Hoja de datos )
| Número de pieza | 2SD2266 | |
| Descripción | Silicon NPN triple diffusion planar type(For power switching) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power Transistors
2SD2266
Silicon NPN triple diffusion planar type
For power switching
Unit: mm
s Features
q High-speed switching
q Satisfactory linearity of foward current transfer ratio hFE
q Allowing supply with the radial taping
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
IB
PC
80
60
7
8
4
1
15
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
10.0±0.2
5.0±0.1
1.0
90°
0.35±0.1
1.2±0.1
0.65±0.1
1.05±0.1
0.55±0.1
C1.0
2.25±0.2
0.55±0.1
C1.0 1 2 3
2.5±0.2
2.5±0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
VCB = 80V, IE = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 1A
VCE = 4V, IC = 4A
VCE = 4V, IC = 4A
IC = 4A, IB = 0.4A
VCE = 12V, IC = 0.2A, f = 10MHz
IC = 4A, IB1 = 0.4A, IB2 = – 0.4A,
VCC = 50V
min typ max Unit
100 µA
100 µA
60 V
70 320
20
2.0 V
1.5 V
80 MHz
0.3 µs
1.0 µs
0.2 µs
*hFE1 Rank classification
Rank
Q
P
hFE1 70 to 150 120 to 250
O
160 to 320
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SD2266.PDF ] | |
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