DataSheet.es    


PDF 2SD2170 Data sheet ( Hoja de datos )

Número de pieza 2SD2170
Descripción Medium Power Transistor(Motor/ Relay drive) (90 / 2A)
Fabricantes ROHM Semiconductor 
Logotipo ROHM Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de 2SD2170 (archivo pdf) en la parte inferior de esta página.


Total 1 Páginas

No Preview Available ! 2SD2170 Hoja de datos, Descripción, Manual

Transistors
Medium Power Transistor
(Motor,
Relay
drive)
(90
+20
10
,
2A)
2SD2170
2SD2170
!Features
1) Built-in zener diode between collector and base.
2) Zener diode has low dispersion.
3) Strong protection against reverse power surges due to
"L" loads.
4) Darlington connection for high DC current gain.
5) Built-in resistor between base and emitter.
6) Built-in damper diode.
!External dimensions (Units : mm)
ROHM : MPT3
EIAJ : SC-62
4.0
1.0 2.5 0.5
(1)
(2)
(3)
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCES
VEBO
90 +20
10
90 +20
10
6
Collector current
2
IC
3
Collector power dissipation
PC
2
Junction temperature
Tj 150
Storage temperature
Tstg
55~+150
*1 Single pulse Pw = 10ms , Duty = 1 / 2
*2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
Unit
V
V
V
A (DC)
*A (Pulse) 1
W *2
°C
°C
!Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
2SD2170
MPT3
1k~10k
DM
T100
1000
!Circuit diagram
C
B
R1 R2
E : Emitter
B : Base
C : Collector
E
R1 3.5k
R2 300
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min. Typ. Max.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
BVCEO
80
80
- 110
- 110
Collector cutoff current
ICBO
- - 10
Emitter cutoff current
IEBO
- -3
Collector-emitter saturation voltage
VCE(sat)
-
- 1.5
DC current transfer ratio
hFE
1000
- 10000
Transition frequency
fT - 80 -
Output capacitance
*1 Measured using pulse current.
Cob
- 25 -
*2 Transition frequency of the device.
Unit
V
V
µA
mA
V
-
MHz
pF
Conditions
IC = 50µA
IC = 1mA
VCB = 70V
VEB = 5V
IC/IB = 1A/1mA
VCE = 2V , IC = 1A
VCE = 5V , IE = 0.1A , f = 30MHz
VCB = 10V , IE = 0A , f = 1MHz
*1
*1
*2

1 page





PáginasTotal 1 Páginas
PDF Descargar[ Datasheet 2SD2170.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
2SD217(2SD217 / 2SD218) NPN SILICON EPITAXIAL MESA TRANSISTORETC
ETC
2SD2170Medium Power Transistor(Motor/ Relay drive) (90 / 2A)ROHM Semiconductor
ROHM Semiconductor
2SD2171S(2SDxxxx) MEDIUM POWER TRANSISTORROHM Semiconductor
ROHM Semiconductor
2SD2176NPN Epitaxial Planar Silicon TransistorSanyo Semicon Device
Sanyo Semicon Device

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar