|
|
Número de pieza | 2SD2170 | |
Descripción | Medium Power Transistor(Motor/ Relay drive) (90 / 2A) | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SD2170 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
No Preview Available ! Transistors
Medium Power Transistor
(Motor,
Relay
drive)
(90
+20
−10
,
2A)
2SD2170
2SD2170
!Features
1) Built-in zener diode between collector and base.
2) Zener diode has low dispersion.
3) Strong protection against reverse power surges due to
"L" loads.
4) Darlington connection for high DC current gain.
5) Built-in resistor between base and emitter.
6) Built-in damper diode.
!External dimensions (Units : mm)
ROHM : MPT3
EIAJ : SC-62
4.0
1.0 2.5 0.5
(1)
(2)
(3)
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCES
VEBO
90 +20
−10
90 +20
−10
6
Collector current
2
IC
3
Collector power dissipation
PC
2
Junction temperature
Tj 150
Storage temperature
Tstg
−55~+150
*1 Single pulse Pw = 10ms , Duty = 1 / 2
*2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
Unit
V
V
V
A (DC)
*A (Pulse) 1
W *2
°C
°C
!Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
2SD2170
MPT3
1k~10k
DM
T100
1000
!Circuit diagram
C
B
R1 R2
E : Emitter
B : Base
C : Collector
E
R1 3.5kΩ
R2 300 Ω
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min. Typ. Max.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
BVCEO
80
80
- 110
- 110
Collector cutoff current
ICBO
- - 10
Emitter cutoff current
IEBO
- -3
Collector-emitter saturation voltage
VCE(sat)
-
- 1.5
DC current transfer ratio
hFE
1000
- 10000
Transition frequency
fT - 80 -
Output capacitance
*1 Measured using pulse current.
Cob
- 25 -
*2 Transition frequency of the device.
Unit
V
V
µA
mA
V
-
MHz
pF
Conditions
IC = 50µA
IC = 1mA
VCB = 70V
VEB = 5V
IC/IB = 1A/1mA
VCE = 2V , IC = 1A
VCE = 5V , IE = −0.1A , f = 30MHz
VCB = 10V , IE = 0A , f = 1MHz
*1
*1
*2
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet 2SD2170.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SD217 | (2SD217 / 2SD218) NPN SILICON EPITAXIAL MESA TRANSISTOR | ETC |
2SD2170 | Medium Power Transistor(Motor/ Relay drive) (90 / 2A) | ROHM Semiconductor |
2SD2171S | (2SDxxxx) MEDIUM POWER TRANSISTOR | ROHM Semiconductor |
2SD2176 | NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |