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PDF 2SD1748A Data sheet ( Hoja de datos )
| Número de pieza | 2SD1748A | |
| Descripción | Silicon NPN triple diffusion planar type Darlington | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power Transistors
2SD1748, 2SD1748A
Silicon NPN triple diffusion planar type Darlington
For low-freauency power amplification
Complementary to 2SB1178 and 2SB1178A
7.0±0.3
3.0±0.2
Unit: mm
3.5±0.2
s Features
q High foward current transfer ratio hFE
q High-speed switching
q I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1748
base voltage 2SD1748A
VCBO
60
80
V
Collector to 2SD1748
emitter voltage 2SD1748A
VCEO
60
80
V
1.1±0.1
0.75±0.1
0.85±0.1
0.4±0.1
2.3±0.2
4.6±0.4
123
7.0±0.3
2.0±0.2
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
3.5±0.2
0 to 0.15
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
5
4
2
15
1.3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
V
A
A
W
˚C
˚C
Conditions
3.0±0.2
1.1±0.1
0.75±0.1
123
2.3±0.2
4.6±0.4
2.5
0.5 max.
0.9±0.1
0 to 0.15
1:Base
2:Collector
3:Emitter
I Type Package (Y)
min typ max Unit
Collector cutoff
2SD1748
current
2SD1748A
Collector cutoff
2SD1748
current
2SD1748A
Emitter cutoff current
Collector to emitter 2SD1748
voltage
2SD1748A
ICBO
ICEO
IEBO
VCEO
VCB = 60V, IE = 0
VCB = 80V, IB = 0
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
1
mA
1
2
mA
2
2 mA
60
V
80
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1
hFE2*
VBE
VCE(sat)
fT
ton
tstg
tf
*hFE2 Rank classification
Rank
Q
P
VCE = 4V, IC = 1A
VCE = 4V, IC = 2A
VCE = 4V, IC = 2A
IC = 2A, IB = 8mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 2A, IB1 = 8mA, IB2 = –8mA,
VCC = 50V
Internal Connection
B
1000
2000
C
10000
2.8 V
2.5 V
20 MHz
0.5 µs
4 µs
1 µs
hFE2 2000 to 5000 4000 to 10000
E
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD1748A.PDF ] | |
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