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PDF 2SD1474 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1474 | |
| Descripción | Silicon NPN epitaxial planar type(For power amplification with high forward current transfer ratio) | |
| Fabricantes | Panasonic Semiconductor | |
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Power Transistors
2SD1474
Silicon NPN epitaxial planar type
For power amplification with high forward current transfer ratio
s Features
q High forward current transfer ratio hFE which has satisfactory
linearity
q High emitter to base voltage VEBO
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
IB
PC
100
60
15
12
6
3
40
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE*
VCE(sat)
fT
ton
tstg
tf
VCB = 100V, IE = 0
VEB = 15V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 1A
IC = 5A, IB = 0.1A
VCE = 12V, IC = 0.5A, f = 10MHz
IC = 5A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V
*hFE Rank classification
Rank
Q
P
hFE 300 to 1200 800 to 2000
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
100 µA
100 µA
60 V
300 2000
0.5 V
30 MHz
0.3 µs
1.5 µs
0.6 µs
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SD1474.PDF ] | |
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