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PDF 2SD1211 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1211 | |
| Descripción | Silicon NPN epitaxial planer type(For low-frequency amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SD1211
Silicon NPN epitaxial planer type
For low-frequency amplification
Complementary to 2SB987
s Features
q High collector to emitter voltage VCEO.
q Optimum for the driver-stage of a low-frequency and 40 to 60W
output amplifier.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
120
120
5
1
0.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
2.54±0.15
+0.2
0.45–0.1
1.27
1.27
123
+0.2
0.45–0.1
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
VCEO
VEBO
hFE1*
hFE2
VCE(sat)
VBE(sat)
fT
Cob
IC = 0.1mA, IB = 0
120
V
IE = 10µA, IC = 0
5
V
VCE = 10V, IC = 150mA
130 330
VCE = 5V, IC = 500mA
50
IC = 300mA, IB = 30mA
1V
IC = 300mA, IB = 30mA
1.2 V
VCB = 10V, IE = –50mA, f = 200MHz 200 MHz
VCB = 10V, IE = 0, f = 1MHz
20 pF
*hFE1 Rank classification
Rank
R
S
hFE1 130 ~ 220 185 ~ 330
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD1211.PDF ] | |
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