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Número de pieza | HY628400ALLG-I | |
Descripción | 512K x8 bit 5.0V Low Power CMOS slow SRAM | |
Fabricantes | Hynix Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HY628400ALLG-I (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
No Preview Available ! Document Title
512K x8 bit 5.0V Low Power CMOS slow SRAM
Revision History
Revision No History
04 Revision History Insert
05 Revised
- Change Iccdr Value : 15uA => 20uA
06 Marking Information Add
Revised
- E.T (-25~85°C), I.T (-40~85°C) Part Insert
- AC Test Condition Add : 5pF Test Load
07 Changed Logo
- HYUNDAI -> hynix
- Marking Information Change
HY628400A Series
512Kx8bit CMOS SRAM
Draft Date
Jul.06.2000
Remark
Final
Aug.04.2000 Final
Dec.04.2000 Final
Apr.30.2001 Final
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev 07 / Apr. 2001
Hynix Semiconductor
1 page HY628400A Series
AC CHARACTERISTICS
TA = 0¡ Éto 70¡ É(Normal)/-25°C to 85°C (Extended) /-40°C to 85°C (Industrial), unless otherwise specified.
# Symbol
Parameter
55ns
Min. Max.
70ns
Min. Max.
85ns
Min Max.
Unit
READ CYCLE
1 tRC Read Cycle Time
55 - 70 - 85 - ns
2 tAA
Address Access Time
- 55 - 70 - 85 ns
3 tACS Chip Select Access Time
- 55 - 70 - 85 ns
4 tOE Output Enable to Output Valid
- 25 - 40 - 45 ns
5 tCLZ Chip Select to Output in Low Z
10 - 10 - 10 - ns
6 tOLZ Output Enable to Output in Low Z
5 - 5 - 5 - ns
7 tCHZ Chip Deselecting to Output in High Z
0 20 0 25 0 30 ns
8 tOHZ Out Disable to Output in High Z
0 20 0 25 0 30 ns
9 tOH Output Hold from Address Change
10 - 10 - 10 - ns
WRITE CYCLE
10 tWC Write Cycle Time
55 - 70 - 85 - ns
11 tCW Chip Selection to End of Write
45 - 60 - 70 - ns
12 tAW Address Valid to End of Write
45 - 60 - 70 - ns
13 tAS
Address Set-up Time
0 - 0 - 0 - ns
14 tWP Write Pulse Width
40 - 50 - 55 - ns
15 tWR Write Recovery Time
0 - 0 - 0 - ns
16 tWHZ Write to Output in High Z
0 20 0 25 0 30 ns
17 tDW Data to Write Time Overlap
25 - 30 - 40 - ns
18 tDH Data Hold from Write Time
0 - 0 - 0 - ns
19 tOW Output Active from End of Write
5 - 5 - 5 - ns
AC TEST CONDITIONS
TA = 0¡ Éto 70¡ É(Normal)/-25°C to 85°C (Extended) /-40°C to 85°C (Industrial), unless otherwise specified.
Parameter
Value
Input Pulse Level
0.8V to 2.4V
Input Rise and Fall Time
5ns
Input and Output Timing Reference Level
1.5V
Output Load
tCLZ,tOLZ,tCHZ,tOHZ,tWHZ
CL = 5pF + 1TTL Load
Others
CL = 100pF + 1TTL Load
AC TEST LOADS
TTL
CL(1)
Note
1. Including jig and scope capacitance
Rev 07 / Apr. 2001
4
5 Page HY628400A Series
MARKING INFORMATION
Package
Marking Example
SOP
hyn i x
KOR E A
HY 6 2 8 4 0 0A
y y ww p
c cG- s s t
TSOP-II
• hynix
• KOREA
• HY628400A
• yy
• ww
•p
• cc
• G / T2
• ss
•t
Note
- Capital Letter
- Small Letter
hyn i x
KOR E A
HY 6 2 8 4 0 0A
y y ww p
ccT2 - sst
Index
: hynix Logo
: Origin Country
: Part Name
: Year ( ex : 00 = year 2000, 01 = year 2001 )
: Work Week ( ex : 12 = ww12 )
: Process Code
: Power Consumption
- L : Low Power
- LL : Low Low Power
: Package Type
- G : SOP
- T2 : TSOP-II
: Speed
- 55 : 55ns
- 70 : 70ns
: Temperature
- Blank
: Commercial ( 0 ~ 70 °C )
- E : Extended ( -25 ~ 85 °C )
- I : Industrial ( -40 ~ 85 °C )
: Fixed Item
: Non-fixed Item (Except hynix)
Rev 07 / Apr. 2001
10
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet HY628400ALLG-I.PDF ] |
Número de pieza | Descripción | Fabricantes |
HY628400ALLG-E | 512K x8 bit 5.0V Low Power CMOS slow SRAM | Hynix Semiconductor |
HY628400ALLG-I | 512K x8 bit 5.0V Low Power CMOS slow SRAM | Hynix Semiconductor |
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