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PDF FMMT551 Data sheet ( Hoja de datos )
| Número de pieza | FMMT551 | |
| Descripción | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* 60 Volt VCEO
* 1 Amp continuous current
FMMT551
E
C
COMPLEMENTARY TYPE FMMT451
PARTMARKING DETAIL 551
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Base Current
IB
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX. UNIT
-80
-60
-5
-2
-1
-200
500
-55 to +200
CONDITIONS.
V
V
V
A
A
mA
mW
°C
Collector-Base
Breakdown Voltage
V(BR)CBO -80
V IC=-100µA
Collector-Emitter
Sustaining Voltage
VCEO(sus) -60
V IC=-10mA*
Emitter-Base Breakdown V(BR)EBO -5
Voltage
V IE=-100µA
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
IEBO
VCE(sat)
-0.1
-0.1
-0.35
µA
µA
V
VCB=-60V
VEB=-4V
IC=-150mA, IB=-15mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-1.1 V
IC=-150mA, IB=-15mA*
Static Forward Current
Transfer Ratio
Transition
Frequency
hFE
fT
50 150
10
IC=-150mA, VCE=-10V*
IC=-1A, VCE=-10V*
150 MHz IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Cobo
25 pF VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
3 - 129
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FMMT551.PDF ] | |
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