PDF FDM3300NZ Data sheet ( Hoja de datos )

Número de pieza	FDM3300NZ
Descripción	Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
Fabricantes	Fairchild Semiconductor
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No Preview Available ! February 2003 FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead frame with all the drains on one side of the package. Applications • Li-Ion Battery Pack Features • 10 A, 20 V RDS(ON) = 23 mΩ @ VGS = 4.5 V RDS(ON) = 28 mΩ @ VGS = 2.5 V • > 2000v ESD Protection • Low Profile – 1mm maximum – in the new package MicroFET 3.3x3.3 mm D2 DD22 D1 D1 S1 G1 S2 G2 MicroFET Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1a) – Pulsed Power Dissipation (Steady State) (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1b) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size 3300N FDM3300NZ 7’’ 1 2 3 4 Ratings 20 ±12 10 40 2.5 1.2 –55 to +150 52 108 5 Tape width 12mm 8 7 6 5 Units V V A W °C °C/W Quantity 3000 units ©2003 Fairchild Semiconductor Corporation FDM3300NZ Rev. E3 (W) 1 page PSPICE Electrical Model N-Channel .SUBCKT FDM3300NZ 2 1 3 NOM TEMP=25 DEG C FEB 26, 2003 CA 12 8 1E-9 CB 15 14 1.2E-9 CIN 6 8 10.8E-10 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 23.3 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTHRES 6 21 19 8 1 EVTEMP 20 6 18 22 1 IT 8 17 1 LGATE 1 9 3.84E-9 LDRAIN 2 5 1.00E-9 LSOURCE 3 7 4E-9 GATE 1 RLGATE 1 9 38.4 RLDRAIN 2 5 10 RLSOURCE 3 7 40 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 8.3E-3 RGATE 9 20 4.2 RSLC1 5 51 RSLCMOD 1E-6 RSLC2 5 50 1E3 RSOURCE 8 7 RSOURCEMOD 3.9E-3 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 LGATE RLGA TE D PLC AP 10 RSLC2 5 RSLC1 51 5 51 ESLC DBREA K 11 LDRA IN RL DRA IN DRA IN 2 - ESG 6 8 + EVTHRES EVTEMP + 19 - 8 RGATE + 18 - 6 9 20 22 50 R DRA IN 21 16 EBREA K + 17 18 - MWEAK MMED MSTRO D BODY CIN 8 S1A 12 13 8 S2A 14 13 15 RSOUR CE 7 LSOURC E SOURC E 3 RLSOU RCE RBR EAK 17 18 S1 B S2B CA 13 CB + + 14 EGS 6 8 EDS 5 8 -- RVTEMP 19 IT - VBA T + 8 22 RVTHR ES S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))(PWR(V(5,51)/(1E-6115),3))} .MODEL DBODYMOD D (IS=2E-12 RS=9.9E-3 N=0.90 TRS1=2.1E-3 TRS2=1.0E-6 CJO=4.5E-10 TT=1E-9 M=0.45 IKF=0.3 XTI=2.0) .MODEL DBREAKMOD D (RS=1E-1 TRS1=1.12E-3 TRS2=1.25E-6) .MODEL DPLCAPMOD D (CJO=45E-11 IS=1E-30 N=10 M=0.4) .MODEL MMEDMOD NMOS (VTO=1.05 KP=8 IS=1E-30 N=10 TOX=1 L=1U W=1U RG=4.2) .MODEL MSTROMOD NMOS (VTO=1.31 KP=82 IS=1E-30 N=10 TOX=1 L=1U W=1U) .MODEL MWEAKMOD NMOS (VTO=0.81 KP=0.05 IS=1E-30 N=10 TOX=1 L=1U W=1U RG=42 RS=.1) .MODEL RBREAKMOD RES (TC1=0.56E-3 TC2=1.00E-7) .MODEL RDRAINMOD RES (TC1=4.6E-3 TC2=10E-6) .MODEL RSLCMOD RES (TC1=2.5E-3 TC2=8E-6) .MODEL RSOURCEMOD RES (TC1=1.0E-3 TC2=1E-6) .MODEL RVTHRESMOD RES (TC1=-1.85E-3 TC2=-7E-6) .MODEL RVTEMPMOD RES (TC1=-0.7E-3 TC2=0.50E-6) .MODEL S1AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-4 VOFF=-3) .MODEL S1BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-3 VOFF=-4) .MODEL S2AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-1.0 VOFF=0.6) .MODEL S2BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=0.6 VOFF=-1.0) .ENDS Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. FDM3300NZ Rev E3 (W) 5 Page

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