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PDF 2SK3397 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3397 | |
| Descripción | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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2SK3397
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS )
2SK3397
Relay Drive and DC-DC Converter Applications
Motor Drive Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.)
• High forward transfer admittance: Yfs = 110 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
• Enhancement-model: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Tc = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
30
30
±20
70
210
125
273
70
12.5
150
−55 to150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Rth (ch-c)
1.0 °C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 40 µH, IAR = 70 A,
RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
JEDEC
―
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Circuit Configuration
4
1
3
1 2002-02-27
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SK3397.PDF ] | |
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