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PDF 2SK3204 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3204 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3204
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3204 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
• FEATURES
• Low on-state resistance :
RDS(on)1 = 34 mΩ (MAX.) (VGS = 10 V, ID = 8 A)
RDS(on)2 = 50 mΩ (MAX.) (VGS = 4 V, ID = 8 A)
• Low Ciss : Ciss = 940 pF (TYP.)
• Built-in gate protection diode.
• ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3204
MP-10
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
60
Gate to Source Voltage
VGSS(AC)
±20
Gate to Source Voltage
VGSS(DC)
+20, −10
Drain Current (DC)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±15
±45
Total Power Dissipation (TA = 25 °C)
PT
1.8
Channel Temperature
Tch 150
Storage Temperature
• Single Avalanche Current Note2
• Single Avalanche Energy Note2
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
Tstg
IAS
EAS
−55 to +150
15
22.5
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V→0 V
V
V
V
A
A
W
°C
°C
A
mJ
THERMAL RESISTANCE
Channel to Ambient
Rth(ch-A)
69.4 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13796EJ1V0DS00 (1st edition)
Date Published April 1999 NS CP (K)
Printed in Japan
The mark • shows major revised points.
©
1998, 1999
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SK3204.PDF ] | |
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