(PDF) 2SK3080 Datasheet - Silicon N Channel MOS FET High Speed Power Switching

Número de pieza	2SK3080
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK3080 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline TO–220AB ADE-208-635A (Z) 2nd. Edition May 1998 D G S 1 2 3 1. Gate 2. Drain(Flange) 3. Source 1 page 2SK3080 1000 Body–Drain Diode Reverse Recovery Time 300 100 30 10 3 di / dt = 50 A / µs 1 0.1 0.3 VGS = 0, Ta = 25 °C 1 3 10 30 100 Reverse Drain Current I DR (A) 10000 5000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz 2000 1000 500 Ciss Coss 200 Crss 100 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 50 I D = 30 A 40 30 VDS 20 VDD = 5 V 10 V 25 V VGS 20 16 12 8 10 V DD = 25 V 4 10 V 5V 0 0 8 16 24 32 40 Gate Charge Qg (nc) 1000 Switching Characteristics 300 100 t f 30 t r t d(off) 10 t d(on) 3 VGS = 10 V, V DD = 10 V PW = 5 µs, duty < 1 % 1 0.1 0.3 1 3 10 30 Drain Current I D (A) 100 5 5 Page

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PDF 2SK3080 Data sheet ( Hoja de datos )