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Número de pieza | 2SK2796 | |
Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SK2796 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! 2SK2796(L), 2SK2796(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 0.12Ω typ.
• 4V gate drive devices.
• High speed switching
Outline
DPAK |1
D
G
S
ADE-208-534C (Z)
4th. Edition
Jun 1998
44
12 3
12 3
1. Gate
2. Drain
3. Source
4. Drain
1 page 2SK2796(L), 2SK2796(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2.0
Pulse Test
1.6
1.2
0.8 I D = 5 A
0.4 2 A
1A
0 2 4 6 8 10
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
5
Pulse Test
2
1
0.5
0.2 VGS = 4 V
0.1 10 V
0.05
0.1
0.3 1 3 10 30
Drain Current I D (A)
100
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
1A
2A
0.3 I D = 5 A
V GS = 4 V
0.2
0.1
10 V
5A
1, 2 A
0
–40 0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
10
Tc = –25 °C
5
25 °C
2
75 °C
1
0.5
0.2
0.1
0.1
V DS = 10 V
Pulse Test
0.2 0.5 1 2
5 10
Drain Current I D (A)
5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet 2SK2796.PDF ] |
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