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PDF 2SK2751 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2751 | |
| Descripción | Silicon N-Channel Junction FET | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Silicon Junction FETs (Small Signal)
2SK2751
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For pyroelectric sensor
s Features
q Low noise-figure (NF)
q High gate to drain voltage VGDO
q Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
unit: mm
0.65±0.15
1
3
2
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
VGDS
ID
IG
PD
Tch
Tstg
Ratings
−40
10
2
200
150
−55 to +150
Unit
V
mA
mA
mW
°C
°C
0.1 to 0.3
0.4±0.2
1: Source
2: Drain
3: Gate
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package (3-pin)
Marking Symbol: HS
s Electrical Characteristics (Ta = 25 ± 3°C)
Parameter
Symbol
Conditions
min typ max Unit
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
IDSS
IGSS
VGDS
VGSC
| Yfs |
VDS = 10V, VGS = 0
VGS = −20V, VDS = 0
IG = −100µA, VDS = 0
VDS = 10V, ID = 1µA
VDS = 10V, ID = 1µA, f = 1kHz
1.4
−40
2.5
4.7 mA
−1 nA
V
−3.5 V
mS
Input capacitance (Common Source) Ciss
5 pF
Output capacitance (Common Source) Coss
VDS = 10V, VGS = 0, f = 1MHz
1 pF
Reverse transfer capacitance (Common Source) Crss
1 pF
Note: The test method to comply with JISC7030, Field effect transistor test method.
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SK2751.PDF ] | |
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