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Número de pieza | 2SK2519-01 | |
Descripción | N-channel MOS-FET | |
Fabricantes | Fuji Electric | |
Logotipo | ||
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FAP-II Series
> Features
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Avalanche Proof
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
V DS
200
Drain-Gate-Voltage (RGS=20KΩ)
V DGR
200
Continous Drain Current
I D 10
Pulsed Drain Current
I D(puls)
40
Gate-Source-Voltage
V GS
±30
Max. Power Dissipation
P D 40
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
N-channel MOS-FET
200V 0,4Ω 10A 40W
> Outline Drawing
> Equivalent Circuit
Unit
V
V
A
A
V
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=200V Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±30V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=5A
VGS=10V
Forward Transconductance
g fs ID=5A VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=150V
t r ID=10A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
t f RGS=10 Ω
Avalanche Capability
I AV L = 100µH Tch=25°C
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
Reverse Recovery Time
t rr IF=IDR VGS=0V
Reverse Recovery Charge
Q rr -dIF/dt=100A/µs Tch=25°C
Min.
200
2,5
2,0
10
Typ. Max.
3,0
10
0,2
10
0,35
4,5
500
110
50
10
30
30
20
3,5
500
1,0
100
0,4
750
170
80
20
50
50
30
1,15 1,8
130
750
Unit
V
V
µA
mA
nA
Ω
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
nC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
75,0 °C/W
3,125 °C/W
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 2SK2519-01.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SK2519-01 | N-channel MOS-FET | Fuji Electric |
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