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PDF 2SK2380 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2380 | |
| Descripción | Silicon N-Channel Junction FET | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Silicon Junction FETs (Small Signal)
2SK2380
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For infrared sensor
s Features
q Low gate to source leakage current, IGSS
q Small capacitance of Ciss, Coss, Crss
q SS-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
VGDO
VGSO
ID
IG
PD
Tch
Tstg
Ratings
−40
−40
±1
10
125
125
−55 to +125
Unit
V
V
mA
mA
mW
°C
°C
1.6±0.15
unit: mm
0.4 0.8±0.1 0.4
1
3
2
0.2±0.1
1: Source
2: Drain
3: Gate
EIAJ: SC-75
SS-Mini Type Package (3-pin)
Marking Symbol (Example): EB
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Drain to Source cut-off current IDSS*
Gate to Source leakage current IGSS
Gate to Drain voltage
VDS
Gate to Source cut-off voltage VGSC
Forward transfer admittance
| Yfs |
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Conditions
VDS = 10V, VGS = 0
VGS = −20V, VDS = 0
IG = −10µA, VDS = 0
VDS = 10V, ID = 1µA
VDS = 10V, VGS = 0, f = 1kHz
VDS = 10V, VGS = 0, f = 1MHz
min typ max Unit
50 200 µA
− 0.5
nA
−40 V
−1.3 −3
V
0.05 mS
1 pF
0.4 pF
0.4 pF
* IDSS rank classification
Runk
Q
IDSS (mA) 50 to 100
Marking Symbol EBQ
R
70 to 130
EBR
S
100 to 200
EBS
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SK2380.PDF ] | |
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