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PDF 2SK2347 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2347 | |
| Descripción | High-Voltage/ High-Speed Switching Applications | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number : EN5424A
Features
• Low ON resistance, ultrahigh-speed switching.
• High reliability (Adoption of HVP process).
N-Channel Silicon MOSFET
2SK2347
High-Voltage, High-Speed
Switching Applications
Package Dimensions
unit: mm
2131-TO-3JML
[2SK2347]
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
VDSS
VGSS
ID
IDP
PD
PW≤10µs, duty cycle≤1%
Tc=25°C
Channel Temperature
Tch
Storage temperature
Tstg
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
D-S Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current IDSS
Gate-to Source Leak Current IGSS
Cutoff Voltage
VGS(off)
Forward Transfer Admittance |yfs|
Static Drain-to-Source
RDS(on)
ON-State Resistance
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance Crss
ID=1mA, VGS=0
VDS=1000V, VGS=0
VGS=±30V, VDS=0
VDS=10V, ID=1mA
VDS=20V, ID=10A
ID=10A, VGS=10V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
1 : Gate
2 : Drain
3 : Source
SANYO: TO-3JML
Ratings
1000
±30
20
40
4.6
160
150
–55 to +150
Unit
V
V
A
A
W
W
°C
°C
min
1000
1.5
5.0
Ratings
typ max
1.0
±100
3.5
10
0.6 0.8
Unit
V
mA
nA
V
S
Ω
3300
pF
750 pF
500 pF
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
72597TS (KOTO) TA-1033 No.5424-1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SK2347.PDF ] | |
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