(PDF) 2SK2247 Datasheet - Silicon N-Channel MOS FET

Número de pieza	2SK2247
Descripción	Silicon N-Channel MOS FET
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK2247 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source. • Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline UPAK G 21 3 4 D 1. Gate 2. Drain 3. Source 4. Drain S 1 page 1000 Typical Capacitance vs. Drain to Source Voltage Ciss 100 Coss Crss 10 VGS = 0 f = 1 MHz 1 0 10 20 30 40 50 Drain to Source Voltage V DS (V) 2SK2247 Switching Characteristics 200 100 50 t d(off) 20 t f 10 t d(on) 5 2 0.05 tr V GS = 10 V, PW = 2 µs V DD = 30 V, duty < 1 % 0.1 0.2 0.5 1 2 Drain Current I D (A) 5 Reverse Drain Current vs. Source to Drain Voltage 5 Pulse Test 4 3 10 V 2 5V 1 VGS = 0 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) 5 5 Page

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PDF 2SK2247 Data sheet ( Hoja de datos )