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Número de pieza | 2SK2226-01S | |
Descripción | N-channel MOS-FET | |
Fabricantes | Fuji Electric | |
Logotipo | ||
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No Preview Available ! 2SK2226-01L,S
F-III Series
N-channel MOS-FET
150V 0,08Ω 20A 80W
> Features
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Forward Transconductance
> Outline Drawing
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
V DS
150
Drain-Gate-Voltage (RGS=20KΩ)
Continous Drain Current
V DGR
ID
150
20
Pulsed Drain Current
I D(puls)
80
Gate-Source-Voltage
V GS
±20
Max. Power Dissipation
P D 80
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
> Equivalent Circuit
Unit
V
V
A
A
V
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=150V Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±20V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=10A
VGS=4V
ID=10A
VGS=10V
Forward Transconductance
g fs
ID=10A
VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=30V
t r ID=20A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
Avalanche Capability
t f RGS=25Ω
I AV L=100µH Tch=25°C
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
Reverse Recovery Time
t rr IF=IDR VGS=0V
Reverse Recovery Charge
Q rr -dIF/dt=100A/µs Tch=25°C
Min.
150
1,0
10
20
Typ. Max.
1,5
10
0,2
10
0,065
0,055
20
2300
330
150
15
20
450
100
2,5
500
1,0
100
0,1
0,08
3450
500
230
25
30
700
150
1,1 1,5
125
0,6
Unit
V
V
µA
mA
nA
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
125 °C/W
1,56 °C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 2SK2226-01S.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SK2226-01L | N-channel MOS-FET | Fuji Electric |
2SK2226-01S | N-channel MOS-FET | Fuji Electric |
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