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PDF 2SK2218 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2218 | |
| Descripción | N-Channel Junction Silicon FET | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK2218 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Ordering number:ENN5202
N-Channel Junction Silicon FET
2SK2218
High-Frequency Low-Noise Amplifier
Applications
Features
· Adoption of FBET process.
· Amateur radio equipment.
· UHF amplifiers, MIX, OSC, analog switches.
· Large | yfs |.
· Small Ciss.
Package Dimensions
unit:mm
2125
[2SK2218]
4.5
1.6
1.5
Specifications
0.4 0.5
32
1.5
3.0
1
0.75
0.4
1 : Source
2 : Gate
3 : Drain
SANYO : PCP
(Bottom View)
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Symbol
VDSX
VGDS
IG
ID
Allowable Power Dissipation
PD
Junction Temperature
Storage Temperature
Tj
Tstg
Conditions
Mounted on ceramic board (250mm2× 0.8mm)
Ratings
15
–15
10
100
400
800
150
–55 to +150
Unit
V
V
mA
mA
mW
mW
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Zero-Gate Voltage Drain Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)GDS
IGSS
IDSS**
VGS(off)
| yfs |
** : Pulse Test Pulse Width≤2mS
* : The 2SK2218 is classified by IDSS as follows (unit : mA).
IG=–10µA, VDS=0
VGS=–10V, VDS=0
VDS=5V, VGS=0
VDS=5V, ID=100µA
VDS=5V, VGS=0, f=1kHz
40 3 52 48 4 63 57 5 75
Marking : KN
IDSS ranks : 3, 4, 5
Ratings
min typ max
Unit
–15 V
–1.0 nA
40* 75* mA
–1.2 –2.6 –4.5 V
24 32
mS
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82599TH (KT)/90195YK (KOTO) BX-0347 No.5202–1/6
1 page  
2SK2218
S parameter Frequency Characteristics
(Common gate) (VDG=5V, ID=10mA)
S parameter Frequency Characteristics
(Common gate) (VDG=5V, ID=10mA)
S parameter (Common gate)
VDG=5V, ID=10mA, ZO=50Ω
Freq (MHz)
100
200
300
400
500
600
700
| S11 |
0.024
0.038
0.054
0.055
0.060
0.055
0.053
∠ S11
54.7
48.5
32.4
20.5
1.8
–19.1
–41.6
| S21 |
0.985
0.963
0.932
0.903
0.875
0.849
0.826
∠ S21
–9.7
–18.8
–27.3
–35.4
–43.6
–51.4
–60.1
| S12 |
0.059
0.078
0.097
0.113
0.124
0.132
0.137
∠ S12
21.9
30.1
30.2
27.3
23.4
19.0
15.0
| S22 |
0.942
0.918
0.896
0.870
0.847
0.826
0.811
∠ S22
–9.0
–17.3
–25.4
–33.0
–40.5
–48.2
–56.0
No.5202–5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK2218.PDF ] | |
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